0 votes 0 votes closed as a duplicate of: NIELIT 2017 OCT Scientific Assistant A (CS) - Section D: 11 In MOSFET fabrication, the channel; length is defined during the process of Isolation oxide growth Channel stop implantation Poly-silicon gate patterning Lithography step leading to the contact pad Digital Signal Processing nielit2017oct-assistanta-it non-gate + – admin asked Aug 28, 2020 • closed Aug 24, 2021 by Arjun admin 388 views comment Share Follow See all 0 reply Please log in or register to add a comment.