Answer should be C, as read cycle itself refreshes the value. we don't need a memory refresh cycle again.
https://gateoverflow.in/?qa=blob&qa_blobid=12537040844512335301
the memory on a dynamic RAM memory chip is organized in a matrix formed by rows and columns of memory cells. The simplest type of dynamic RAM cell contains only one transistor and one capacitor. Whether a 1 or 0 is contained in a cell is determined by whether or not there is a charge on the capacitor. During a read operation, one of the row select lines is brought high by decoding the row address (low-order address bits). The activated row select line turns on the switch transistors for all cells in the selected row. This causes the refresh amplifier associated with each column to sense the voltage level on the corresponding capacitor and interpret it as a 0 or a 1. If it is more than 50 percent, it reads it as a 1; otherwise it reads it as a 0. The column address (high-order address bits) enables one cell in the selected row for the output. The read cycle is actually a read/write cycle. If a '1' is read then the cell is re-written to with a '1' to recharge it. However if a '0' is read no recharge is necessary.